崗位職責(zé):
1.負責(zé)MOCVD外延設(shè)備和工藝的日常運行
2.通過各種表征手段分析優(yōu)化GaN材料質(zhì)量
3.分析并且解決外延材料生長和MOCVD設(shè)備相關(guān)的技術(shù)問題
4.開發(fā)下一代GaN基高效藍光/綠光(mini/micro)LED外延結(jié)構(gòu)，如更短的生長時間，波長均勻性，良率，ESD，亮度等等，并導(dǎo)入量產(chǎn)
5.負責(zé)研發(fā)項目從立項到導(dǎo)入量產(chǎn)的整個過程，組建項目技術(shù)團隊，負責(zé)項目團隊的管理。

任職要求:
1.物理學(xué)、材料科學(xué)、電子工程、化學(xué)工程等相關(guān)學(xué)科的碩士或博士以上學(xué)歷，具備5年以上的氮化物半導(dǎo)體器件方面，尤其GaN LED領(lǐng)域的實際工作經(jīng)驗
2.具備5年以上量產(chǎn)型MOCVD機臺和技術(shù)開發(fā)的經(jīng)驗，尤其是GaN外延材料生長的經(jīng)驗 
3.非常熟悉了解三五族半導(dǎo)體材料的表征分析，如以下分析手段：High resolution x-ray diffraction (XRD), Photoluminescence (PL), Electroluminescence (EL), Atomic force microscopy (AFM), Ellipsometry, SIMS, etc
4.非常熟悉了解，并通過DOE，SPC以及相應(yīng)的數(shù)據(jù)分析處理方法來分析root-cause并解決問題
5.熟練使用各種數(shù)據(jù)分析方法，以及掌握數(shù)據(jù)分析軟件的使用，如JMP, MiniTab等
6.自律并可獨立開展技術(shù)研究和開發(fā)的研究者，并具備優(yōu)秀的團隊溝通協(xié)調(diào)能力
7.可以適應(yīng)短時間，高強度壓力下的技術(shù)難題和事項的挑戰(zhàn)，并且在專業(yè)范圍以內(nèi)或以外，通過有效的團隊協(xié)作解決各種不同的問題
8.優(yōu)先考慮美國和歐洲留學(xué)背景的應(yīng)聘者；此外優(yōu)先考慮中科院，北京大學(xué)，蘇州納米所，中國科學(xué)技術(shù)大學(xué)，吉林大學(xué)，南京大學(xué)，武漢大學(xué)，浙江大學(xué)，廈門大學(xué)，大連理工大學(xué)，山東大學(xué)等一本院校
9.專業(yè)的英語聽、說、讀、寫能力
10.特別有潛力和優(yōu)秀的面試者可適當(dāng)放寬條件
 
Responsibility:
1. Responsible for the general operation of MOCVD systems.
2. Evaluate epitaxial material using the various characterization tools.
3. Troubleshoot and resolve materials and MOCVD equipment related issues.
4. Develop next-generation GaN-based Blue/Green (mini/micro) LED Epi processes with shorter process time, high uniformity, high yield, high ESD robustness, high LOP and etc.
5. Oversee entire R&D project progress; assemble and manage project team.

Qualifications:
1. Ph.D. (with 5+ years of applicable hands-on experience) in Physics, Chemical Engineering, Material Science, Electrical Engineering, or other related discipline(s). Master degree with strong background will also be considered.
2. 5 (5+) years of direct experience with commercial MOCVD process and equipment technology. Prior track record of GaN epitaxial material growth is a plus.
3.Prior experience in III-V materials characterization techniques such as: High resolution x-ray diffraction (XRD), Photoluminescence (PL), Electroluminescence (EL), Atomic force microscopy (AFM), Ellipsometry, SIMS, etc. is strongly desired.
4. Experience in semiconductor manufacturing epitaxy utilizing design of experiment (DOE), statistical process control (SPC), and methodical data analysis for process performance improvement and structured (root-cause) troubleshooting is essential.
5. Demonstrated proficiency in the use of statistical analysis programs for gathering and analyzing process data related to performance specifications, such as JMP, MiniTab.
6. A highly-motivated self-starter with ability to work independently and a strong team player with good communication skills.
7. Ability to adapt to changing priorities, thriving on technical challenges within and outside of core area of expertise, and to interact effectively across multi-functional teams.